NVMFS016N10MCLT1G
onsemi
onsemi
PTNG 100V LL SO8FL
$0.52
Available to order
Reference Price (USD)
1+
$0.52387
500+
$0.5186313
1000+
$0.5133926
1500+
$0.5081539
2000+
$0.5029152
2500+
$0.4976765
Exquisite packaging
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Boost your electronic applications with NVMFS016N10MCLT1G, a reliable Transistors - FETs, MOSFETs - Single by onsemi. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, NVMFS016N10MCLT1G meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 3V @ 64µA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 64W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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