DMTH61M8LPSQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 41V~60V POWERDI506
$1.30
Available to order
Reference Price (USD)
1+
$1.29750
500+
$1.284525
1000+
$1.27155
1500+
$1.258575
2000+
$1.2456
2500+
$1.232625
Exquisite packaging
Discount
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Boost your electronic applications with DMTH61M8LPSQ-13, a reliable Transistors - FETs, MOSFETs - Single by Diodes Incorporated. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, DMTH61M8LPSQ-13 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 115.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 187.5W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8 (Type K)
- Package / Case: 8-PowerTDFN
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