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NVH4L075N065SC1

onsemi
NVH4L075N065SC1 Preview
onsemi
SIC MOS TO247-4L 650V
$8.45
Available to order
Reference Price (USD)
1+
$8.45351
500+
$8.3689749
1000+
$8.2844398
1500+
$8.1999047
2000+
$8.1153696
2500+
$8.0308345
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V
  • Vgs(th) (Max) @ Id: 4.3V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V
  • Vgs (Max): +22V, -8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1196 pF @ 325 V
  • FET Feature: -
  • Power Dissipation (Max): 148W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4

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