NVF2955T1G
onsemi
onsemi
MOSFET P-CH 60V 2.6A SOT223
$1.24
Available to order
Reference Price (USD)
1+
$1.24000
500+
$1.2276
1000+
$1.2152
1500+
$1.2028
2000+
$1.1904
2500+
$1.178
Exquisite packaging
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Discover NVF2955T1G, a versatile Transistors - FETs, MOSFETs - Single solution from onsemi, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 170mOhm @ 750mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223 (TO-261)
- Package / Case: TO-261-4, TO-261AA
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