NTTFS1D2N02P1E
onsemi
onsemi
MOSFET N-CH 25V 23A/180A 8PQFN
$1.87
Available to order
Reference Price (USD)
1+
$1.87000
500+
$1.8513
1000+
$1.8326
1500+
$1.8139
2000+
$1.7952
2500+
$1.7765
Exquisite packaging
Discount
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NTTFS1D2N02P1E by onsemi is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, NTTFS1D2N02P1E ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1mOhm @ 38A, 10V
- Vgs(th) (Max) @ Id: 2V @ 934µA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
- Vgs (Max): +16V, -12V
- Input Capacitance (Ciss) (Max) @ Vds: 4040 pF @ 13 V
- FET Feature: -
- Power Dissipation (Max): 820mW (Ta), 52W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (3.3x3.3)
- Package / Case: 8-PowerWDFN
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