IST026N10NM5AUMA1
Infineon Technologies
Infineon Technologies
TRENCH >=100V PG-HSOF-5
$5.57
Available to order
Reference Price (USD)
1+
$5.57000
500+
$5.5143
1000+
$5.4586
1500+
$5.4029
2000+
$5.3472
2500+
$5.2915
Exquisite packaging
Discount
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Discover high-performance IST026N10NM5AUMA1 from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IST026N10NM5AUMA1 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 248A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 148µA
- Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 313W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-5-1
- Package / Case: 5-PowerSFN
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