NTMYS4D6N04CLTWG
onsemi
onsemi
MOSFET N-CH 40V 21A/78A LFPAK4
$1.43
Available to order
Reference Price (USD)
1+
$1.42709
500+
$1.4128191
1000+
$1.3985482
1500+
$1.3842773
2000+
$1.3700064
2500+
$1.3557355
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with NTMYS4D6N04CLTWG, a premium Transistors - FETs, MOSFETs - Single from onsemi. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust NTMYS4D6N04CLTWG for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id: 2V @ 40µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK4 (5x6)
- Package / Case: SOT-1023, 4-LFPAK
Related Products
Infineon Technologies
BSO130P03SHXUMA1
Toshiba Semiconductor and Storage
TPH1110ENH,L1Q
STMicroelectronics
STB8N65M5
Diodes Incorporated
DMT5015LFDF-7
STMicroelectronics
STW56N65M2-4
Vishay Siliconix
SIHFR220-GE3
Diodes Incorporated
DMP10H400SE-13
Vishay Siliconix
SIHD3N50D-BE3
Microchip Technology
APT45M100J
IXYS