NTMYS4D5N04CTWG
onsemi
onsemi
MOSFET N-CH 40V 20A/80A 4LFPAK
$1.64
Available to order
Reference Price (USD)
1+
$1.64353
500+
$1.6270947
1000+
$1.6106594
1500+
$1.5942241
2000+
$1.5777888
2500+
$1.5613535
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NTMYS4D5N04CTWG by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NTMYS4D5N04CTWG inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
- Vgs (Max): 20V
- Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK4 (5x6)
- Package / Case: SOT-1023, 4-LFPAK
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