BSM300C12P3E301
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 1200V 300A MODULE
$1,028.57
Available to order
Reference Price (USD)
1+
$1028.57000
500+
$1018.2843
1000+
$1007.9986
1500+
$997.7129
2000+
$987.4272
2500+
$977.1415
Exquisite packaging
Discount
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Upgrade your electronic designs with BSM300C12P3E301 by Rohm Semiconductor, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, BSM300C12P3E301 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 5.6V @ 80mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 10 V
- FET Feature: Standard
- Power Dissipation (Max): 1360W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: -
- Supplier Device Package: Module
- Package / Case: Module
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