NTMT190N65S3HF
onsemi
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
$5.31
Available to order
Reference Price (USD)
1+
$5.31000
500+
$5.2569
1000+
$5.2038
1500+
$5.1507
2000+
$5.0976
2500+
$5.0445
Exquisite packaging
Discount
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Discover NTMT190N65S3HF, a versatile Transistors - FETs, MOSFETs - Single solution from onsemi, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 5V @ 430µA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 162W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-PQFN (8x8)
- Package / Case: 4-PowerTSFN
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