25P06
Goford Semiconductor
Goford Semiconductor
P60V,RD(MAX)<45M@-10V,VTH2V~3V T
$0.91
Available to order
Reference Price (USD)
1+
$0.91000
500+
$0.9009
1000+
$0.8918
1500+
$0.8827
2000+
$0.8736
2500+
$0.8645
Exquisite packaging
Discount
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Optimize your electronic systems with 25P06, a high-quality Transistors - FETs, MOSFETs - Single from Goford Semiconductor. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, 25P06 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 45mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3384 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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