NTMFSC011N08M7
onsemi
onsemi
MV7 80V SG 10MOHM PQFN56DC
$0.71
Available to order
Reference Price (USD)
1+
$0.70840
500+
$0.701316
1000+
$0.694232
1500+
$0.687148
2000+
$0.680064
2500+
$0.67298
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with NTMFSC011N08M7 by onsemi, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, NTMFSC011N08M7 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 61A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 120µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Ta), 78.1W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (5x6.15)
- Package / Case: 8-PowerVDFN
Related Products
Diodes Incorporated
DMT10H9M9SH3
Infineon Technologies
IRL8114PBF
Diodes Incorporated
DMN10H120SFG-13
Renesas Electronics America Inc
2SK1399-T2B-A
onsemi
2SK544F-AC
Microchip Technology
APTM50UM13SAG
Renesas Electronics America Inc
2SK1590(0)-T1B-AT
Renesas Electronics America Inc
RJK0211DPA-00#J5A
Renesas
NP32N055SLE-E1-AZ
onsemi