NP32N055SLE-E1-AZ
Renesas
Renesas
NP32N055 - POWER FIELD-EFFECT TR
$1.52
Available to order
Reference Price (USD)
1+
$1.51838
500+
$1.5031962
1000+
$1.4880124
1500+
$1.4728286
2000+
$1.4576448
2500+
$1.442461
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance NP32N055SLE-E1-AZ from Renesas, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, NP32N055SLE-E1-AZ delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta), 66W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (MP-3ZK)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
onsemi
FDMS86150A
Renesas Electronics America Inc
2SJ317NYTL-E
IXYS
IXTY44N10T-TRL
onsemi
NTTFS5CS73NLTWG
Diodes Incorporated
DMN10H220LFDF-13
Wolfspeed, Inc.
PC3M0045065L
Renesas Electronics America Inc
RJK1003DPP-A0#T2
Nexperia USA Inc.
BUK9M67-60ELX
Renesas
HAT2205C-EL-E
Diodes Incorporated