NTMFS6H836NLT1G
onsemi
onsemi
MOSFET N-CH 80V 16A/77A 5DFN
$0.66
Available to order
Reference Price (USD)
1+
$0.65785
500+
$0.6512715
1000+
$0.644693
1500+
$0.6381145
2000+
$0.631536
2500+
$0.6249575
Exquisite packaging
Discount
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Experience the power of NTMFS6H836NLT1G, a premium Transistors - FETs, MOSFETs - Single from onsemi. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, NTMFS6H836NLT1G is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 77A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2V @ 95µA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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