FDI038AN06A0
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 60V 17A/80A I2PAK
$2.72
Available to order
Reference Price (USD)
800+
$2.64514
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with FDI038AN06A0, a high-quality Transistors - FETs, MOSFETs - Single from Fairchild Semiconductor. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, FDI038AN06A0 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 3.8mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 310W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK (TO-262)
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
onsemi
FCH47N60-F133
Texas Instruments
CSD16322Q5
Vishay Siliconix
SQ3425EV-T1_GE3
Vishay Siliconix
IRFBC30APBF
Infineon Technologies
AUIRLZ44ZL
Diodes Incorporated
DMN3023L-7
Vishay Siliconix
SIHB22N60AEL-GE3
Panjit International Inc.
PJL9428_R2_00001
Taiwan Semiconductor Corporation
TSM70N600CI C0G
Fairchild Semiconductor