NTMFS5C612NLWFT1G
onsemi
onsemi
MOSFET N-CH 60V 235A 5DFN
$3.23
Available to order
Reference Price (USD)
1,500+
$1.61546
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
onsemi presents NTMFS5C612NLWFT1G, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, NTMFS5C612NLWFT1G delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 235A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
Related Products
IXYS
IXFT150N25X3HV
Infineon Technologies
IPA60R750E6XKSA1
Infineon Technologies
IPP60R080P7XKSA1
IXYS
IXTH2R4N120P
onsemi
FQD19N10LTM
Infineon Technologies
IRFZ46NPBF
onsemi
FQP34N20
Rohm Semiconductor
SCT3080ALGC11
Vishay Siliconix
IRF740LCPBF-BE3
Fairchild Semiconductor