SCT3080ALGC11
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 650V 30A TO247N
$13.04
Available to order
Reference Price (USD)
1+
$9.88000
10+
$8.92300
25+
$8.50760
100+
$7.38700
450+
$7.05500
900+
$6.43250
1,350+
$5.81000
Exquisite packaging
Discount
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Optimize your electronic systems with SCT3080ALGC11, a high-quality Transistors - FETs, MOSFETs - Single from Rohm Semiconductor. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, SCT3080ALGC11 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
- Vgs(th) (Max) @ Id: 5.6V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V
- FET Feature: -
- Power Dissipation (Max): 134W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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