NTH4L060N065SC1
onsemi
onsemi
SIC MOS TO247-4L 650V
$15.96
Available to order
Reference Price (USD)
1+
$15.96000
500+
$15.8004
1000+
$15.6408
1500+
$15.4812
2000+
$15.3216
2500+
$15.162
Exquisite packaging
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Boost your electronic applications with NTH4L060N065SC1, a reliable Transistors - FETs, MOSFETs - Single by onsemi. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, NTH4L060N065SC1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
- Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
- Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
- Vgs (Max): +22V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
- FET Feature: -
- Power Dissipation (Max): 176W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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