IPZ40N04S5L3R6ATMA1
Infineon Technologies
Infineon Technologies
MOSFET_(20V 40V) PG-TSDSON-8
$0.51
Available to order
Reference Price (USD)
1+
$0.51000
500+
$0.5049
1000+
$0.4998
1500+
$0.4947
2000+
$0.4896
2500+
$0.4845
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with IPZ40N04S5L3R6ATMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust IPZ40N04S5L3R6ATMA1 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 87A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2V @ 21µA
- Gate Charge (Qg) (Max) @ Vgs: 32.8 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 1966 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 58W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-33
- Package / Case: 8-PowerTDFN
Related Products
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJQ50N03B-F1-1100HF
Micro Commercial Co
MCAC50P03B-TP
Diodes Incorporated
DMN63D1LT-13
Renesas Electronics America Inc
2SJ624-T1B-AT
Diodes Incorporated
DMN10H099SFG-7
Vishay Siliconix
SQJ410EP-T1_GE3
Rohm Semiconductor
RS3E130ATTB1
onsemi
NTBLS001N06C
Diodes Incorporated
DMTH4008LPS-13
Harris Corporation