NTGD4167CT1G
onsemi
onsemi
MOSFET N/P-CH 30V 2.6/1.9A 6TSOP
$0.64
Available to order
Reference Price (USD)
3,000+
$0.15976
6,000+
$0.14945
15,000+
$0.13914
30,000+
$0.13193
75,000+
$0.13118
Exquisite packaging
Discount
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Experience the next level of semiconductor technology with onsemi s NTGD4167CT1G, part of the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are built to deliver exceptional performance with features like high current capacity, minimal power loss, and enhanced durability. Suitable for a wide array of applications including LED lighting, automotive systems, and renewable energy solutions. Get in touch with us today to request a sample or inquire about bulk pricing for NTGD4167CT1G.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.6A, 1.9A
- Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 15V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: 6-TSOP
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