IPG16N10S461AATMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 100V 16A 8TDSON
$0.63
Available to order
Reference Price (USD)
5,000+
$0.40905
Exquisite packaging
Discount
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Discover high-performance IPG16N10S461AATMA1 from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are designed for efficiency and reliability, making them ideal for various electronic applications. Features include low power consumption, high switching speed, and excellent thermal stability. Perfect for power management, amplification, and switching circuits. Contact us today for a quote and let Infineon Technologies s IPG16N10S461AATMA1 enhance your projects with superior quality and performance.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 16A
- Rds On (Max) @ Id, Vgs: 61mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 9µA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
- Power - Max: 29W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-10
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