NTD600N80S3Z
onsemi
onsemi
MOSFET POWER, N-CHANNEL, SUPERFE
$1.90
Available to order
Reference Price (USD)
1+
$1.90000
500+
$1.881
1000+
$1.862
1500+
$1.843
2000+
$1.824
2500+
$1.805
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance NTD600N80S3Z from onsemi, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, NTD600N80S3Z delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 180µA
- Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 725 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-PAK (TO-252)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Rohm Semiconductor
R6504END3TL1
Infineon Technologies
IPB042N10N3GE8187ATMA1
Toshiba Semiconductor and Storage
TK39N60X,S1F
Alpha & Omega Semiconductor Inc.
AOU3N60
STMicroelectronics
STP3NK60ZFP
onsemi
FDS86267P
onsemi
NVJS4151PT1G
Panjit International Inc.
PJQ5445-AU_R2_000A1
Goford Semiconductor
G20P10KE
Vishay Siliconix