SIHG16N50C-E3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 500V 16A TO247AC
$4.81
Available to order
Reference Price (USD)
1+
$5.08000
10+
$4.53800
100+
$3.72080
500+
$3.01290
1,000+
$2.54100
2,500+
$2.41395
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance SIHG16N50C-E3 from Vishay Siliconix, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, SIHG16N50C-E3 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 380mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
Related Products
onsemi
FDB0260N1007L
Rohm Semiconductor
RD3H160SPTL1
Rohm Semiconductor
R6004ENX
Vishay Siliconix
IRFD9110PBF
Nexperia USA Inc.
PMN30ENEAX
Infineon Technologies
IPU95R1K2P7AKMA1
Alpha & Omega Semiconductor Inc.
AON7421
Renesas Electronics America Inc
2SK1589-T1B-A
onsemi
FDMS8622
Alpha & Omega Semiconductor Inc.