NTD4815NHT4G
onsemi
onsemi
MOSFET N-CH 30V 6.9A/35A DPAK
$0.07
Available to order
Reference Price (USD)
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$0.07000
500+
$0.0693
1000+
$0.0686
1500+
$0.0679
2000+
$0.0672
2500+
$0.0665
Exquisite packaging
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Experience the power of NTD4815NHT4G, a premium Transistors - FETs, MOSFETs - Single from onsemi. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, NTD4815NHT4G is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
- Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 12 V
- FET Feature: -
- Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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