NTD18N06T4G
onsemi
onsemi
MOSFET N-CH 60V 18A DPAK
$0.29
Available to order
Reference Price (USD)
1+
$0.29000
500+
$0.2871
1000+
$0.2842
1500+
$0.2813
2000+
$0.2784
2500+
$0.2755
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
onsemi presents NTD18N06T4G, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, NTD18N06T4G delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 60mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 55W (Tj)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Vishay Siliconix
SIA459EDJ-T1-GE3
Vishay Siliconix
SQS405EN-T1_GE3
Toshiba Semiconductor and Storage
2SK209-BL(TE85L,F)
Inventchip
IV1Q12050T4
Toshiba Semiconductor and Storage
TK040Z65Z,S1F
Renesas Electronics America Inc
UPA2718AGR-E2-AT
onsemi
NTMFSC004N08MC
Infineon Technologies
IRFP250MPBF
Infineon Technologies
IPD80R280P7ATMA1
onsemi