IV1Q12050T4
Inventchip
Inventchip
SIC MOSFET, 1200V 50MOHM, TO-247
$40.34
Available to order
Reference Price (USD)
1+
$40.34000
500+
$39.9366
1000+
$39.5332
1500+
$39.1298
2000+
$38.7264
2500+
$38.323
Exquisite packaging
Discount
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Discover high-performance IV1Q12050T4 from Inventchip, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IV1Q12050T4 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 65mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id: 3.2V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 20 V
- Vgs (Max): +20V, -5V
- Input Capacitance (Ciss) (Max) @ Vds: 2750 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 344W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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