NTD18N06-1G
onsemi
onsemi
MOSFET N-CH 60V 18A IPAK
$0.14
Available to order
Reference Price (USD)
1+
$0.14000
500+
$0.1386
1000+
$0.1372
1500+
$0.1358
2000+
$0.1344
2500+
$0.133
Exquisite packaging
Discount
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Optimize your electronic systems with NTD18N06-1G, a high-quality Transistors - FETs, MOSFETs - Single from onsemi. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, NTD18N06-1G provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 60mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 55W (Tj)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-PAK
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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