NP88N04NUG-S18-AY
Renesas
Renesas
NP88N04NUG-S18-AY - MOS FIELD EF
$2.48
Available to order
Reference Price (USD)
1+
$2.47521
500+
$2.4504579
1000+
$2.4257058
1500+
$2.4009537
2000+
$2.3762016
2500+
$2.3514495
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with NP88N04NUG-S18-AY, a reliable Transistors - FETs, MOSFETs - Single by Renesas. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, NP88N04NUG-S18-AY meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.4mOhm @ 44A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
Vishay Siliconix
SIHA21N80AE-GE3
IXYS
IXTT38N30L2HV
Renesas
UPA1902TE-T1-AT
Renesas Electronics America Inc
2SJ210(0)-T1B-AT
onsemi
NVH040N65S3F
Diodes Incorporated
DMT3003LFGQ-13
Renesas Electronics America Inc
2SK1583-AZ
Diodes Incorporated
DMP3007SPSQ-13
Renesas Electronics America Inc
NP45N06VUK-E1-AY
onsemi