DMT3003LFGQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 22A PWRDI3333
$0.40
Available to order
Reference Price (USD)
1+
$0.40256
500+
$0.3985344
1000+
$0.3945088
1500+
$0.3904832
2000+
$0.3864576
2500+
$0.382432
Exquisite packaging
Discount
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Optimize your electronic systems with DMT3003LFGQ-13, a high-quality Transistors - FETs, MOSFETs - Single from Diodes Incorporated. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, DMT3003LFGQ-13 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta), 62W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
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