NP36P06KDG-E1-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET P-CH 60V 36A TO263
$1.79
Available to order
Reference Price (USD)
1+
$1.79000
500+
$1.7721
1000+
$1.7542
1500+
$1.7363
2000+
$1.7184
2500+
$1.7005
Exquisite packaging
Discount
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Renesas Electronics America Inc presents NP36P06KDG-E1-AY, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, NP36P06KDG-E1-AY delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 29.5mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 56W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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