NP100P04PDG-E1-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET P-CH 40V 100A TO263
$4.71
Available to order
Reference Price (USD)
1+
$4.71000
500+
$4.6629
1000+
$4.6158
1500+
$4.5687
2000+
$4.5216
2500+
$4.4745
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with NP100P04PDG-E1-AY, a reliable Transistors - FETs, MOSFETs - Single by Renesas Electronics America Inc. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, NP100P04PDG-E1-AY meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Rohm Semiconductor
RS1G201ATTB1
onsemi
NTMJS1D7N04CTWG
Renesas Electronics America Inc
2SJ133-Z-E1-AZ
Nexperia USA Inc.
2N7002/HAMR
onsemi
FQU2N60CTU
Alpha & Omega Semiconductor Inc.
AOTF20N60
Vishay Siliconix
IRFPC40PBF
Infineon Technologies
IRFB4020PBF
Infineon Technologies
IPW60R099C6FKSA1
IXYS