FQU2N60CTU
onsemi
onsemi
MOSFET N-CH 600V 1.9A IPAK
$1.10
Available to order
Reference Price (USD)
1+
$1.03000
10+
$0.91100
100+
$0.71980
500+
$0.55824
1,000+
$0.44072
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
FQU2N60CTU by onsemi is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, FQU2N60CTU ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.7Ohm @ 950mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-PAK
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Related Products
Alpha & Omega Semiconductor Inc.
AOTF20N60
Vishay Siliconix
IRFPC40PBF
Infineon Technologies
IRFB4020PBF
Infineon Technologies
IPW60R099C6FKSA1
IXYS
IXFH110N15T2
Rohm Semiconductor
RCX160N20
Infineon Technologies
IPD60R600P7SE8228AUMA1
onsemi
NDF10N60ZG
STMicroelectronics
STD5NK50ZT4
Toshiba Semiconductor and Storage