NGTB30N135IHR1WG
onsemi
onsemi
IGBT 1350V 30A TO247
$0.00
Available to order
Reference Price (USD)
1+
$5.01000
30+
$4.25267
120+
$3.68550
510+
$3.13739
1,020+
$2.64600
Exquisite packaging
Discount
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The NGTB30N135IHR1WG Single IGBT by onsemi sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with onsemi for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1350 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 30A
- Power - Max: 394 W
- Switching Energy: 630µA (off)
- Input Type: Standard
- Gate Charge: 220 nC
- Td (on/off) @ 25°C: -/200ns
- Test Condition: 600V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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