APT20GF120BRDQ1G
Microsemi Corporation
Microsemi Corporation
IGBT 1200V 36A 200W TO247
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Choose APT20GF120BRDQ1G Single IGBTs by Microsemi Corporation for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. Microsemi Corporation's reputation for quality makes APT20GF120BRDQ1G a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 36 A
- Current - Collector Pulsed (Icm): 64 A
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
- Power - Max: 200 W
- Switching Energy: 895µJ (on), 840µJ (off)
- Input Type: Standard
- Gate Charge: 100 nC
- Td (on/off) @ 25°C: 10ns/120ns
- Test Condition: 800V, 15A, 4.3Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 [B]
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