NGD18N45CLBT4G
onsemi
onsemi
INSULATED GATE BIPOLAR TRANSISTO
$0.00
Available to order
Reference Price (USD)
2,500+
$0.66150
5,000+
$0.63000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance NGD18N45CLBT4G Single IGBTs from onsemi, designed for efficient power management in various industrial applications. These transistors offer superior switching capabilities and thermal performance, making them ideal for motor drives, renewable energy systems, and power supplies. Features include low saturation voltage, high current capacity, and robust construction. Whether you're upgrading existing systems or designing new solutions, NGD18N45CLBT4G ensures reliability and efficiency. Contact us today for pricing and technical support!
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 500 V
- Current - Collector (Ic) (Max): 18 A
- Current - Collector Pulsed (Icm): 50 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 4.5V, 7A
- Power - Max: 115 W
- Switching Energy: -
- Input Type: Logic
- Gate Charge: -
- Td (on/off) @ 25°C: 420ns/2.9µs
- Test Condition: 300V, 1kOhm, 5V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252, (D-Pak)
Related Products
Infineon Technologies
SIGC11T60SNCX1SA2
Infineon Technologies
SIGC07T60SNCX7SA1
Infineon Technologies
SIGC12T60NCX7SA2
Infineon Technologies
IRGC20B60KB
Infineon Technologies
SIGC156T60NR2CX1SA2
Infineon Technologies
FF450R12ME4
Infineon Technologies
SIGC14T60SNCX1SA5
IXYS
LGD8201TH
Infineon Technologies
SIGC42T60UNX7SA1
Microsemi Corporation