SIGC11T60SNCX1SA2
Infineon Technologies
Infineon Technologies
IGBT 3 CHIP 600V WAFER
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Upgrade your power electronics with SIGC11T60SNCX1SA2 Single IGBTs by Infineon Technologies, engineered for precision and durability. Perfect for inverters, welding equipment, and automotive applications, these transistors provide fast switching speeds and excellent thermal stability. Key features include high voltage tolerance, low power loss, and compact design. Trust Infineon Technologies for top-quality components that meet global standards. Request a quote now to learn more about how SIGC11T60SNCX1SA2 can enhance your projects.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 10 A
- Current - Collector Pulsed (Icm): 30 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 10A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 28ns/198ns
- Test Condition: 400V, 10A, 25Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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