BF1101WR,115
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 7V DUAL SOT343R
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NXP USA Inc. presents the BF1101WR,115 RF MOSFET series the ultimate solution for high-power RF amplification. With exceptional linearity and low intermodulation distortion, these FETs excel in broadcast equipment and military communications. Their rugged construction ensures longevity even in harsh conditions. Don t compromise on quality request a quote today and experience the difference!
Specifications
- Product Status: Obsolete
- Transistor Type: N-Channel Dual Gate
- Frequency: 800MHz
- Gain: -
- Voltage - Test: 5 V
- Current Rating (Amps): 30mA
- Noise Figure: 1.7dB
- Current - Test: 12 mA
- Power - Output: -
- Voltage - Rated: 7 V
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: CMPAK-4
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