NE3512S02-A
CEL
CEL
HJ-FET NCH 13.5DB S02
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The NE3512S02-A series by CEL sets new benchmarks in RF transistor technology. With patented noise-reduction architecture and gold metallization for corrosion resistance, these MOSFETs dominate in scientific research and satellite communications. Their plug-and-play compatibility simplifies integration. Elevate your design get a personalized quote within 24 hours!
Specifications
- Product Status: Obsolete
- Transistor Type: HFET
- Frequency: 12GHz
- Gain: 13.5dB
- Voltage - Test: 2 V
- Current Rating (Amps): 70mA
- Noise Figure: 0.35dB
- Current - Test: 10 mA
- Power - Output: -
- Voltage - Rated: 4 V
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: S02
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