MHT1004NR3
NXP USA Inc.
NXP USA Inc.
RF POWER LDMOS TRANSISTOR 2450
$0.00
Available to order
Reference Price (USD)
250+
$112.07912
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Unlock next-gen RF performance with MHT1004NR3 from NXP USA Inc.. These MOSFETs feature innovative gallium nitride (GaN) technology for higher efficiency in compact form factors, revolutionizing telecom infrastructure and defense electronics. Their lead-free compliance meets global environmental standards. Let s discuss your application needs contact our sales team now!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2.45GHz
- Gain: 15.2dB
- Voltage - Test: 32 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 100 mA
- Power - Output: 280W
- Voltage - Rated: 65 V
- Package / Case: OM-780-2
- Supplier Device Package: OM-780-2
Related Products
Infineon Technologies
PTFA260851E V1
Ampleon USA Inc.
BLF9G24LS-150VJ
NXP USA Inc.
MW6S010MR1
Ampleon USA Inc.
BLF8G24L-200P,112
NXP USA Inc.
BF511,215
NXP USA Inc.
MRF6S9060NBR1
STMicroelectronics
PD57002S-E
Broadcom Limited
ATF-58143-BLKG
STMicroelectronics
PD85025TR-E
Infineon Technologies