NE3210S01
CEL
CEL
FET RF 4V 12GHZ S01
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NE3210S01 by CEL redefines reliability in RF power transistors. Boasting high breakdown voltage and superior gain bandwidth, these MOSFETs are indispensable in medical imaging and industrial heating systems. Their design prioritizes energy efficiency without sacrificing power. Interested? Send us your requirements and we ll provide customized solutions!
Specifications
- Product Status: Obsolete
- Transistor Type: HFET
- Frequency: 12GHz
- Gain: 13.5dB
- Voltage - Test: 2 V
- Current Rating (Amps): 15mA
- Noise Figure: 0.35dB
- Current - Test: 10 mA
- Power - Output: -
- Voltage - Rated: 4 V
- Package / Case: 4-SMD
- Supplier Device Package: SMD
Related Products
Wolfspeed, Inc.
PTFC261402FC-V1
Infineon Technologies
PXAC261202FCV1XWSA1
Wolfspeed, Inc.
PTFB182503FL-V2-R0
NXP USA Inc.
MRF18085BLR3
onsemi
SCH2816-TL-E
NXP USA Inc.
MRF6S21140HSR5
Wolfspeed, Inc.
PXAC243502FV-V1
CEL
NE350184C
Renesas Electronics America Inc
3SK318YB-TL-E
NXP USA Inc.