PXAC261202FCV1XWSA1
Infineon Technologies
Infineon Technologies
FET RF 2CH 65V 2.61GHZ
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Unlock next-gen RF performance with PXAC261202FCV1XWSA1 from Infineon Technologies. These MOSFETs feature innovative gallium nitride (GaN) technology for higher efficiency in compact form factors, revolutionizing telecom infrastructure and defense electronics. Their lead-free compliance meets global environmental standards. Let s discuss your application needs contact our sales team now!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 2.61GHz
- Gain: 13.5dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 230 mA
- Power - Output: 28W
- Voltage - Rated: 65 V
- Package / Case: H-37248-4
- Supplier Device Package: H-37248-4
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