N0302P-T1-AT
Renesas
Renesas
N0302P-T1-AT - MOSFET N-CHANNEL
$0.23
Available to order
Reference Price (USD)
1+
$0.23296
500+
$0.2306304
1000+
$0.2283008
1500+
$0.2259712
2000+
$0.2236416
2500+
$0.221312
Exquisite packaging
Discount
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Optimize your electronic systems with N0302P-T1-AT, a high-quality Transistors - FETs, MOSFETs - Single from Renesas. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, N0302P-T1-AT provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 54mOhm @ 2.2A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 200mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23F
- Package / Case: SOT-23-3 Flat Leads
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