MVSF2N02ELT1G
onsemi
onsemi
MOSFET N-CH 20V 2.8A SOT23-3
$0.91
Available to order
Reference Price (USD)
3,000+
$0.34222
6,000+
$0.31988
15,000+
$0.30871
30,000+
$0.30262
Exquisite packaging
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MVSF2N02ELT1G by onsemi is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, MVSF2N02ELT1G ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 5 V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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