G2R120MT33J
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC MOSFET N-CH TO263-7
$114.52
Available to order
Reference Price (USD)
1+
$114.52000
500+
$113.3748
1000+
$112.2296
1500+
$111.0844
2000+
$109.9392
2500+
$108.794
Exquisite packaging
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Discover G2R120MT33J, a versatile Transistors - FETs, MOSFETs - Single solution from GeneSiC Semiconductor, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 3300 V
- Current - Continuous Drain (Id) @ 25°C: 35A
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 156mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 20 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 3706 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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