MUN2232T1G
onsemi
onsemi
TRANS PREBIAS NPN 50V 100MA SC59
$0.19
Available to order
Reference Price (USD)
3,000+
$0.03127
6,000+
$0.02831
15,000+
$0.02475
30,000+
$0.02237
75,000+
$0.02000
150,000+
$0.01684
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose the MUN2232T1G from onsemi for your Discrete Semiconductor Products needs. These Transistors - Bipolar (BJT) - Single, Pre-Biased are designed for reliability and high performance, with features such as high current handling, low saturation, and excellent stability. Ideal for applications in medical equipment, security systems, and energy management. onsemi is your trusted partner for quality semiconductors. Inquire now for details and pricing!
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 4.7 kOhms
- Resistor - Emitter Base (R2): 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 338 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SC-59
Related Products
Nexperia USA Inc.
PDTB143XTVL
Yangzhou Yangjie Electronic Technology Co.,Ltd
DTC123JCA-F2-0000HF
Toshiba Semiconductor and Storage
RN2316,LXHF
Diodes Incorporated
DDTA143FE-7-F
onsemi
MUN5234T1
Fairchild Semiconductor
FJN4303RTA
Diodes Incorporated
DDTA143TUA-7
Toshiba Semiconductor and Storage
RN2312(TE85L,F)
Toshiba Semiconductor and Storage
RN1315,LXHF
NXP USA Inc.