PDTB143XTVL
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS PNP 0.46W
$0.04
Available to order
Reference Price (USD)
1+
$0.04235
500+
$0.0419265
1000+
$0.041503
1500+
$0.0410795
2000+
$0.040656
2500+
$0.0402325
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-quality PDTB143XTVL from Nexperia USA Inc., a leading solution in the Discrete Semiconductor Products category. Our Transistors - Bipolar (BJT) - Single, Pre-Biased are designed for efficiency and reliability, making them ideal for various electronic applications. These transistors feature excellent performance, low power consumption, and robust construction. Perfect for amplification and switching circuits, they are widely used in consumer electronics, automotive systems, and industrial equipment. Trust Nexperia USA Inc. for superior semiconductor solutions. Contact us today for a quote or more information!
Specifications
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 4.7 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 140 MHz
- Power - Max: 320 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
Related Products
Yangzhou Yangjie Electronic Technology Co.,Ltd
DTC123JCA-F2-0000HF
Toshiba Semiconductor and Storage
RN2316,LXHF
Diodes Incorporated
DDTA143FE-7-F
onsemi
MUN5234T1
Fairchild Semiconductor
FJN4303RTA
Diodes Incorporated
DDTA143TUA-7
Toshiba Semiconductor and Storage
RN2312(TE85L,F)
Toshiba Semiconductor and Storage
RN1315,LXHF
NXP USA Inc.
PDTA114EE,115-NXP
Infineon Technologies