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MSCMC120AM04CT6LIAG

Microchip Technology
MSCMC120AM04CT6LIAG Preview
Microchip Technology
PM-MOSFET-SIC-SBD~-SP6C LI
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Specifications

  • Product Status: Active
  • FET Type: 2 N Channel (Phase Leg)
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 388A (Tc)
  • Rds On (Max) @ Id, Vgs: 5.7mOhm @ 300A, 20V
  • Vgs(th) (Max) @ Id: 4V @ 90mA
  • Gate Charge (Qg) (Max) @ Vgs: 966nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 16700pF @ 1000V
  • Power - Max: 1754W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP6C LI

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