APTSM120AM09CD3AG
Microsemi Corporation
Microsemi Corporation
MOSFET 2 N-CH 1200V 337A MODULE
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Reference Price (USD)
100+
$615.88880
Exquisite packaging
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Experience the next level of semiconductor technology with Microsemi Corporation s APTSM120AM09CD3AG, part of the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are built to deliver exceptional performance with features like high current capacity, minimal power loss, and enhanced durability. Suitable for a wide array of applications including LED lighting, automotive systems, and renewable energy solutions. Get in touch with us today to request a sample or inquire about bulk pricing for APTSM120AM09CD3AG.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 337A (Tc)
- Rds On (Max) @ Id, Vgs: 11mOhm @ 180A, 20V
- Vgs(th) (Max) @ Id: 3V @ 9mA
- Gate Charge (Qg) (Max) @ Vgs: 1224nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 1000V
- Power - Max: -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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