CSD13306WT
Texas Instruments
Texas Instruments
MOSFET N-CH 12V 3.5A 6DSBGA
$1.15
Available to order
Reference Price (USD)
250+
$0.36040
500+
$0.30600
750+
$0.26520
1,250+
$0.23800
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose CSD13306WT by Texas Instruments. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with CSD13306WT inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 10.2mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 1.9W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-DSBGA (1x1.5)
- Package / Case: 6-UFBGA, DSBGA
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