MSC080SMA120S
Microchip Technology
Microchip Technology
SICFET N-CH 1200V 35A D3PAK
$12.52
Available to order
Reference Price (USD)
1+
$12.52000
500+
$12.3948
1000+
$12.2696
1500+
$12.1444
2000+
$12.0192
2500+
$11.894
Exquisite packaging
Discount
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Boost your electronic applications with MSC080SMA120S, a reliable Transistors - FETs, MOSFETs - Single by Microchip Technology. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, MSC080SMA120S meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 35A
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V
- Vgs (Max): +23V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 182W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D3PAK
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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